UMT1N
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| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | --- |
| Datasheet | UMT1N |
| Description | --- |
sellers UMT1N
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Yangzhou Yangjie Elec Tech UMT1N
- Transistor Type 2PCSPNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 150mA
- Power Dissipation (Pd) 250mW
- Transition Frequency (fT) 140MHz
- DC Current Gain (hFE@Ic,Vce) 120@1mA,6V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@50mA,5mA
- Package SOT-323-6
- Manufacturer Yangzhou Yangjie Elec Tech
- Part id 88085
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