MMBF170LT1G-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | MMBF170LT1G-VB |
| Description | --- |
sellers MMBF170LT1G-VB
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec MMBF170LT1G-VB
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 300mW
- Total Gate Charge (Qg@Vgs) 400pC@4.5V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 25pF@25V
- Continuous Drain Current (Id) 250mA
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 2pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.8Ω@10V,200mA
- Package SOT-23-3
- Manufacturer VBsemi Elec
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