MMBTA 06 LT1
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | MMBTA 06 LT1 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Infineon Technologies MMBTA 06 LT1
- Transistor Type NPN
- Collector Current (Ic) 500mA
- Power Dissipation (Pd) 225mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 100@100mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@10mA,100mA
- Package SOT-23
- Manufacturer Infineon Technologies
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