IPB60R160C6
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IPB60R160C6 |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPB60R160C6
- Power Dissipation (Pd) 176W
- Drain Source Voltage (Vdss) 600V
- Continuous Drain Current (Id) 23.8A
- Gate Threshold Voltage (Vgs(th)@Id) 3.5V@750uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 160mΩ@10V,11.3A
- Package TO-263
- Manufacturer Infineon Technologies
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