3DD13007MD
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| Manufacturer | Jilin Sino-Microelectronics |
| Package | --- |
| Datasheet | 3DD13007MD |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Jilin Sino-Microelectronics 3DD13007MD
- Transistor Type NPN (Triple Diffused Planar Silicon Transistor)
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 45W
- Transition Frequency (fT) 4MHz
- DC Current Gain (hFE@Ic,Vce) 8@1A,5V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 2.5V@8A,2A
- Package TO-220
- Manufacturer Jilin Sino-Microelectronics
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