GL1S12N06L-D8
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| Manufacturer | GL |
| Package | --- |
| Datasheet | GL1S12N06L-D8 |
| Description | --- |
sellers GL1S12N06L-D8
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规格
- RoHS true
- Type 2 N-Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet GL GL1S12N06L-D8
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 2W
- Total Gate Charge (Qg@Vgs) 6.6nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 250pF@30V
- Continuous Drain Current (Id) 12A
- Gate Threshold Voltage (Vgs(th)@Id) 1.4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 20pF@30V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 58mΩ@10V,6A
- Package SOIC-8
- Manufacturer GL
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