PMN50XP-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | PMN50XP-VB |
| Description | --- |
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规格
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec PMN50XP-VB
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 3W
- Total Gate Charge (Qg@Vgs) 5.1nC@4.5V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 450pF@15V
- Continuous Drain Current (Id) 4.8A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 63pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 49mΩ@10V,4.1A
- Package TSOP-6
- Manufacturer VBsemi Elec
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