SIRA18DP-T1-GE3
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| Manufacturer | Vishay Intertech |
| Package | --- |
| Datasheet | SIRA18DP-T1-GE3 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Vishay Intertech SIRA18DP-T1-GE3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 3.3W;14.7W
- Total Gate Charge (Qg@Vgs) 21.5nC@10V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 1000pF@15V
- Continuous Drain Current (Id) 33A
- Gate Threshold Voltage (Vgs(th)@Id) 2.4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 7.5mΩ@10A,10V
- Package PowerPAK-SO-8
- Manufacturer Vishay Intertech
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