TK14G65W,RQ
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| Manufacturer | TOSHIBA |
| Package | --- |
| Datasheet | TK14G65W,RQ |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet TOSHIBA TK14G65W,RQ
- Power Dissipation (Pd) 130W
- Total Gate Charge (Qg@Vgs) 35nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 1300pF@300V
- Continuous Drain Current (Id) 13.7A
- Gate Threshold Voltage (Vgs(th)@Id) 3.5V@690uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 250mΩ@10V,6.9A
- Package D2PAK
- Manufacturer TOSHIBA
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