FCP22N60N
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | FCP(F)22N60N(T) |
| Description | N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-220-3 |
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规格
- Manufacturer ON Semiconductor
- Series SupreMOS™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 165mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Vgs (Max) ±45V
- Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 100V
- FET Feature -
- Power Dissipation (Max) 205W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FCP22
- detail N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-220-3