TO220B03 Pkg Drawing 数据手册
其他文档
FCP(F)22N60N(T) 12 pages
技术规格
- Manufacturer: ON Semiconductor
- Series: SupreMOS™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Vgs (Max): ±45V
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FCP22
- detail: N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-220-3