价格变化
规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDV303N
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 350mW
- Total Gate Charge (Qg@Vgs) 2.3nC@4.5V
- Drain Source Voltage (Vdss) 25V
- Input Capacitance (Ciss@Vds) 50pF@10V
- Continuous Drain Current (Id) 680mA
- Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 450mΩ@4.5V,500mA
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
- FET Feature -
- Power Dissipation (Max) 350mW (Ta)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23
- Package / Case TO-236-3, SC-59, SOT-23-3
- Base Part Number FDV30
