规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet JSMSEMI A1015
- Package SOT-23(TO-236)
- Manufacturer JSMSEMI
- Transistor Type PNP
- Collector Current (Ic) 150mA
- Power Dissipation (Pd) 200mW
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Operating Temperature +150°C@(Tj)
- Transition Frequency (fT) 80MHz
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@100mA,10mA
- DC Current Gain (hFE@Ic,Vce) 130@2mA,6V