规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet LGE BC337-40
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 800mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 210MHz
- DC Current Gain (hFE@Ic,Vce) 250@100mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 700mV@500mA,50mA
- Package TO-92-3
- Manufacturer LGE