规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet FUXINSEMI 2N5551
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 100MHz
- Collector Cut-Off Current (Icbo) 50nA
- Collector-Emitter Breakdown Voltage (Vceo) 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@50mA,5mA
- Package TO-92-3
- Manufacturer FUXINSEMI
- DC Current Gain (hFE@Ic,Vce) 80@10mA,5V
