价格变化
规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet PJSEMI FMMT591
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 500mW
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 100@500mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@1A,100mA
- Package SOT-23
- Manufacturer PJSEMI
