IRFB4229PBF
In 4 Shop
Price is not yet specified
| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IRFB4229PBF |
| Description | --- |
sellers IRFB4229PBF
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IRFB4229PBF | No price |
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IRFB4229PBF | Not Available 163779 IRT |
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Last shop price change: |
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IRFB4229PBF | Not Available No price |
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IRFB4229PBF | Not Available No price The price of this shop's products has not been updated! |
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Price changes
Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IRFB4229PBF
- Operating Temperature -40°C~+175°C@(Tj)
- Power Dissipation (Pd) 330W
- Total Gate Charge (Qg@Vgs) 110nC@10V
- Drain Source Voltage (Vdss) 250V
- Input Capacitance (Ciss@Vds) 4560pF@25V
- Continuous Drain Current (Id) 46A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 46mΩ@10V,26A
- Package TO-220
- Manufacturer Infineon Technologies
Sellers
| Price | ||||
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IRFB4229PBF | No price |
Online shopping
Last shop price change: |
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IRFB4229PBF | Not Available 163779 IRT |
Online shopping
Last shop price change: |
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IRFB4229PBF | Not Available No price |
Online shopping
Last shop price change: |
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IRFB4229PBF | Not Available No price The price of this shop's products has not been updated! |
Online shopping
Last shop price change: |