NCE65TF360F دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NCE65TF360F
|
|
حجم فایل
|
88.246
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
10
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Wuxi NCE Power Semiconductor NCE65TF360F
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
32.6W
-
Total Gate Charge (Qg@Vgs):
19nC@10V
-
Drain Source Voltage (Vdss):
650V
-
Input Capacitance (Ciss@Vds):
870pF@50V
-
Continuous Drain Current (Id):
11.5A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
1.8pF@50V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
290mΩ@10V,7A
-
Package:
TO-220
-
Manufacturer:
Wuxi NCE Power Semiconductor
