NCE65TF360F
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| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | --- |
| Datasheet | NCE65TF360F |
| Description | --- |
sellers NCE65TF360F
تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Wuxi NCE Power Semiconductor NCE65TF360F
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 32.6W
- Total Gate Charge (Qg@Vgs) 19nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 870pF@50V
- Continuous Drain Current (Id) 11.5A
- Gate Threshold Voltage (Vgs(th)@Id) 3.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 1.8pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 290mΩ@10V,7A
- Package TO-220
- Manufacturer Wuxi NCE Power Semiconductor