دیتاشیت MJD112G
مشخصات دیتاشیت
| نام دیتاشیت |
MJD112G
|
| حجم فایل |
59.783
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Darlington Transistors
-
Datasheet:
onsemi MJD112G
-
Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
2A
-
Power Dissipation (Pd):
1.75W
-
Transition frequency (fT):
25MHz
-
DC current gain (hFE@Vce,Ic):
1000@3V,2A
-
Collector-emitter voltage (Vceo):
100V
-
Collector cut-off current (Icbo@Vcb):
20uA
-
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
3V@4A,40mA
-
Package:
TO-252
-
Manufacturer:
onsemi
