دیتاشیت IS61WV51216EDALL, IS6xWV51216EDBLL

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Manufacturer: ISSI, Integrated Silicon Solution Inc
Series: -
Packaging: Tray
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Write Cycle Time - Word, Page: 8ns
Access Time: 8ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (6x8)
detail: SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 8ns 48-miniBGA (6x8)