دیتاشیت BD679AS
مشخصات دیتاشیت
| نام دیتاشیت |
BD6yyy
|
| حجم فایل |
386.252
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi BD679AS
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
4A
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Power Dissipation (Pd):
40W
-
Transition frequency (fT):
-
-
DC current gain (hFE@Vce,Ic):
750@3V,2A
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Collector-emitter voltage (Vceo):
80V
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Collector cut-off current (Icbo@Vcb):
500uA
-
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
2.8V@2A,40mA
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Package:
TO-126-3
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
4A
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Voltage - Collector Emitter Breakdown (Max):
80V
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Vce Saturation (Max) @ Ib, Ic:
2.8V @ 40mA, 2A
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Current - Collector Cutoff (Max):
500µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
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Power - Max:
40W
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Frequency - Transition:
-
-
Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
SOT-32-3
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Base Part Number:
BD679
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detail:
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole SOT-32-3
