BD679AS
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD6yyy |
| Description | Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole SOT-32-3 |
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مشخصات BD679AS
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi BD679AS
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 40W
- Transition frequency (fT) -
- DC current gain (hFE@Vce,Ic) 750@3V,2A
- Collector-emitter voltage (Vceo) 80V
- Collector cut-off current (Icbo@Vcb) 500uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 2.8V@2A,40mA
- Package TO-126-3
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max) 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V
- Power - Max 40W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package SOT-32-3
- Base Part Number BD679
- detail Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole SOT-32-3
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