دیتاشیت NVD5117PLT4G-VF01
مشخصات دیتاشیت
| نام دیتاشیت | NVD5117PLT4G-VF01 |
|---|---|
| حجم فایل | 99.857 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت NVD5117PLT4G-VF01 |
NVD5117PLT4G-VF01 Datasheet |
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مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi NVD5117PLT4G-VF01
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 4.1W;118W
- Total Gate Charge (Qg@Vgs): 85nC@10V
- Input Capacitance (Ciss@Vds): 4800pF@25V
- Continuous Drain Current (Id): 11A;61A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@29A,10V
- Package: TO-252
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4.8nF @ 25V
- FET Feature: -
- Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: NVD511
- detail: P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK