NVD5117PLT4G-VF01
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | NVD5117PLT4G-VF01 |
| Description | P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK |
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مشخصات NVD5117PLT4G-VF01
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NVD5117PLT4G-VF01
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 4.1W;118W
- Total Gate Charge (Qg@Vgs) 85nC@10V
- Input Capacitance (Ciss@Vds) 4800pF@25V
- Continuous Drain Current (Id) 11A;61A
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 16mΩ@29A,10V
- Package TO-252
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Cut Tape (CT)
- Part Status Obsolete
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 11A (Ta), 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 16mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4.8nF @ 25V
- FET Feature -
- Power Dissipation (Max) 4.1W (Ta), 118W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number NVD511
- detail P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK
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