FQB34P10TM 数据手册
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FQB34P10 10 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQB34P10TM
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 3.75W;155W
- Total Gate Charge (Qg@Vgs): 110nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 2910pF@25V
- Continuous Drain Current (Id): 33.5A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,16.75A
- Package: TO-263-3
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263AB)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: FQB3
- detail: P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)