FQB34P10TM
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | FQB34P10 |
| Description | P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB) |
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مشخصات FQB34P10TM
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQB34P10TM
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 3.75W;155W
- Total Gate Charge (Qg@Vgs) 110nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 2910pF@25V
- Continuous Drain Current (Id) 33.5A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 60mΩ@10V,16.75A
- Package TO-263-3
- Manufacturer onsemi
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 33.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 60mOhm @ 16.75A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK (TO-263AB)
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number FQB3
- detail P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)
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