دیتاشیت MTB50P03HDLT4G
مشخصات دیتاشیت
| نام دیتاشیت |
MTB50P03HDL
|
| حجم فایل |
92.723
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi MTB50P03HDLT4G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.5W;125W
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Total Gate Charge (Qg@Vgs):
100nC@5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
4900pF@25V
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Continuous Drain Current (Id):
50A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
25mΩ@25A,5V
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Package:
D2PAK
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
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Rds On (Max) @ Id, Vgs:
25mOhm @ 25A, 5V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
100nC @ 5V
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Input Capacitance (Ciss) (Max) @ Vds:
4900pF @ 25V
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FET Feature:
-
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Mounting Type:
Surface Mount
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Supplier Device Package:
D2PAK
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
MTB50
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detail:
P-Channel 30V 50A (Tc) Surface Mount D2PAK
