MTB50P03HDLT4G
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | MTB50P03HDL |
| Description | P-Channel 30V 50A (Tc) Surface Mount D2PAK |
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مشخصات MTB50P03HDLT4G
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi MTB50P03HDLT4G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;125W
- Total Gate Charge (Qg@Vgs) 100nC@5V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 4900pF@25V
- Continuous Drain Current (Id) 50A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 25mΩ@25A,5V
- Package D2PAK
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Obsolete
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Rds On (Max) @ Id, Vgs 25mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
- FET Feature -
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number MTB50
- detail P-Channel 30V 50A (Tc) Surface Mount D2PAK
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