دیتاشیت 2N6520TA
مشخصات دیتاشیت
| نام دیتاشیت |
2N6515,17,20
|
| حجم فایل |
119.775
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2N6520TA
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
500mA
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Power Dissipation (Pd):
625mW
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Transition Frequency (fT):
40MHz
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DC Current Gain (hFE@Ic,Vce):
20@50mA,10V
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Collector Cut-Off Current (Icbo):
50nA
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Collector-Emitter Breakdown Voltage (Vceo):
350V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@50mA,5mA
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
500mA
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Voltage - Collector Emitter Breakdown (Max):
350V
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Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
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Current - Collector Cutoff (Max):
50nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
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Power - Max:
625mW
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Frequency - Transition:
200MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
2N6520
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detail:
Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625mW Through Hole TO-92-3
