MMBT489LT1G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
MMBT489LT1G
|
|
حجم فایل
|
82.29
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
5
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi MMBT489LT1G
-
Transistor Type:
NPN
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
710mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
300@500mA,5V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
30V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@100mA,1A
-
Package:
SOT-23(TO-236)
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
30V
-
Vce Saturation (Max) @ Ib, Ic:
200mV @ 100mA, 1A
-
Current - Collector Cutoff (Max):
100nA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 500mA, 5V
-
Power - Max:
710mW
-
Frequency - Transition:
100MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Supplier Device Package:
SOT-23-3 (TO-236)
-
Base Part Number:
MMBT489
-
detail:
Bipolar (BJT) Transistor NPN 30V 1A 100MHz 710mW Surface Mount SOT-23-3 (TO-236)
