MMBT489LT1G
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | MMBT489LT1 |
| Description | Bipolar (BJT) Transistor NPN 30V 1A 100MHz 710mW Surface Mount SOT-23-3 (TO-236) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MMBT489LT1G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 710mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 300@500mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@100mA,1A
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max) 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V
- Power - Max 710mW
- Frequency - Transition 100MHz
- Mounting Type Surface Mount
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3 (TO-236)
- Base Part Number MMBT489
- detail Bipolar (BJT) Transistor NPN 30V 1A 100MHz 710mW Surface Mount SOT-23-3 (TO-236)
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