دیتاشیت MPSA29-D26Z
مشخصات دیتاشیت
| نام دیتاشیت |
MPSA28, MPSA29
|
| حجم فایل |
144.774
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi MPSA29-D26Z
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
800mA
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Power Dissipation (Pd):
625mW
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Transition frequency (fT):
125MHz
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DC current gain (hFE@Vce,Ic):
10000@5V,100mA
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Collector-emitter voltage (Vceo):
100V
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Collector cut-off current (Icbo@Vcb):
500nA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
1.5V@100mA,100uA
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
800mA
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
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Current - Collector Cutoff (Max):
500nA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
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Power - Max:
625mW
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Frequency - Transition:
125MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
MPSA29
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detail:
Bipolar (BJT) Transistor NPN - Darlington 100V 800mA 125MHz 625mW Through Hole TO-92-3
