MPSA29-D26Z
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | MPSA28, MPSA29 |
| Description | Bipolar (BJT) Transistor NPN - Darlington 100V 800mA 125MHz 625mW Through Hole TO-92-3 |
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مشخصات MPSA29-D26Z
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi MPSA29-D26Z
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 800mA
- Power Dissipation (Pd) 625mW
- Transition frequency (fT) 125MHz
- DC current gain (hFE@Vce,Ic) 10000@5V,100mA
- Collector-emitter voltage (Vceo) 100V
- Collector cut-off current (Icbo@Vcb) 500nA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 1.5V@100mA,100uA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 800mA
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
- Power - Max 625mW
- Frequency - Transition 125MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number MPSA29
- detail Bipolar (BJT) Transistor NPN - Darlington 100V 800mA 125MHz 625mW Through Hole TO-92-3
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