MJD2955G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJD2955G
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حجم فایل
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87.781
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJD2955T4G
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Transistor Type:
PNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
10A
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Power Dissipation (Pd):
1.75W
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Transition Frequency (fT):
2MHz
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DC Current Gain (hFE@Ic,Vce):
20@4A,4V
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Collector Cut-Off Current (Icbo):
50uA
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Collector-Emitter Breakdown Voltage (Vceo):
60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
8V@10A,3.3A
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
10A
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Voltage - Collector Emitter Breakdown (Max):
60V
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Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
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Current - Collector Cutoff (Max):
50µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
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Power - Max:
1.75W
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Frequency - Transition:
2MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
DPAK
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Base Part Number:
MJD29
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detail:
Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Surface Mount DPAK
