NJVMJD3055T4G
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | MJDxx55 |
| Description | Bipolar (BJT) Transistor NPN 60V 10A 2MHz 20W Surface Mount DPAK |
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مشخصات NJVMJD3055T4G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NJVMJD3055T4G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 10A
- Power Dissipation (Pd) 1.75W
- Transition Frequency (fT) 2MHz
- DC Current Gain (hFE@Ic,Vce) 20@4A,4V
- Collector Cut-Off Current (Icbo) 50uA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 8V@10A,3.3A
- Package TO-252
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 10A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max) 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
- Power - Max 20W
- Frequency - Transition 2MHz
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package DPAK
- Base Part Number MJD305
- detail Bipolar (BJT) Transistor NPN 60V 10A 2MHz 20W Surface Mount DPAK
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