دیتاشیت NJVMJD45H11T4G-VF01
مشخصات دیتاشیت
| نام دیتاشیت | D4(4,5)H(8-11) |
|---|---|
| حجم فایل | 185.086 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت D4(4,5)H(8-11) |
D4(4,5)H(8-11) Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NJVMJD45H11T4G-VF01
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 20W
- Transition Frequency (fT): 90MHz
- DC Current Gain (hFE@Ic,Vce): 40@4A,1V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,400mA
- Package: TO-252
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Active
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 50W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: D45H11
- detail: Bipolar (BJT) Transistor PNP 80V 10A 50W Through Hole TO-220AB
