NJVMJD45H11T4G-VF01
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | D4(4,5)H(8-11) |
| Description | Bipolar (BJT) Transistor PNP 80V 10A 50W Through Hole TO-220AB |
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مشخصات NJVMJD45H11T4G-VF01
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NJVMJD45H11T4G-VF01
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 20W
- Transition Frequency (fT) 90MHz
- DC Current Gain (hFE@Ic,Vce) 40@4A,1V
- Collector Cut-Off Current (Icbo) -
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@8A,400mA
- Package TO-252
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 10A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
- Current - Collector Cutoff (Max) 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
- Power - Max 50W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number D45H11
- detail Bipolar (BJT) Transistor PNP 80V 10A 50W Through Hole TO-220AB
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