2N5551BU دیتاشیت

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مشاهده دیتاشیت 2N5551 - MMBT5551	دانلود دیتاشیت

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Manufacturer: ON Semiconductor
Series: -
Packaging: Bulk
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N5551
detail: Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3