2N5551TA
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | 2N5551 - MMBT5551 |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3 |
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مشخصات 2N5551TA
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2N5551TA
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 80@10mA,5V
- Collector Cut-Off Current (Icbo) 50nA
- Collector-Emitter Breakdown Voltage (Vceo) 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@50mA,5mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 600mA
- Voltage - Collector Emitter Breakdown (Max) 160V
- Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
- Power - Max 625mW
- Frequency - Transition 100MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number 2N5551
- detail Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
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