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- دیتاشیت MJE200G
MJE200G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | MJE200G |
|---|---|
| حجم فایل | 123.894 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت MJE200G |
دانلود دیتاشیت |
|---|
سایر مستندات
MJE210G 6 pages
MJE200,210 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MJE200G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 5A
- Power Dissipation (Pd): 1.5W
- Transition Frequency (fT): 65MHz
- DC Current Gain (hFE@Ic,Vce): 45@2A,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.8V@5A,1A
- Package: TO-225
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
- Power - Max: 15W
- Frequency - Transition: 65MHz
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
- Base Part Number: MJE200
- detail: Bipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole TO-225AA