دیتاشیت MJE200G
مشخصات دیتاشیت
| نام دیتاشیت |
MJE200,210
|
| حجم فایل |
168.439
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJE200G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
1.5W
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Transition Frequency (fT):
65MHz
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DC Current Gain (hFE@Ic,Vce):
45@2A,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
40V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.8V@5A,1A
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Package:
TO-225
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Bulk
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Part Status:
Active
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Current - Collector (Ic) (Max):
5A
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Voltage - Collector Emitter Breakdown (Max):
40V
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Vce Saturation (Max) @ Ib, Ic:
1.8V @ 1A, 5A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 2A, 1V
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Power - Max:
15W
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Frequency - Transition:
65MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
TO-225AA
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Base Part Number:
MJE200
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detail:
Bipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole TO-225AA
