MJE200G
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | MJE200,210 |
| Description | Bipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole TO-225AA |
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مشخصات MJE200G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJE200G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 1.5W
- Transition Frequency (fT) 65MHz
- DC Current Gain (hFE@Ic,Vce) 45@2A,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.8V@5A,1A
- Package TO-225
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 40V
- Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V
- Power - Max 15W
- Frequency - Transition 65MHz
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-225AA
- Base Part Number MJE200
- detail Bipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole TO-225AA
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