دیتاشیت FDS8958A-F085
مشخصات دیتاشیت
| نام دیتاشیت |
FDS8958A_F085
|
| حجم فایل |
550.302
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDS8958A-F085
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
900mW
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Total Gate Charge (Qg@Vgs):
16nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
575pF@15V
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Continuous Drain Current (Id):
7A;5A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
28mΩ@7A,10V
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Package:
SOP-8
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Manufacturer:
onsemi
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Series:
Automotive, AEC-Q101, PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N and P-Channel
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
7A, 5A
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Rds On (Max) @ Id, Vgs:
28mOhm @ 7A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
575pF @ 15V
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Power - Max:
900mW
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SOIC
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Base Part Number:
FDS89
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detail:
Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
