FDS8958A-F085
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Manufacturer | onsemi |
Package | 8-SOIC (0.154", 3.90mm Width) |
Datasheet | FDS8958A_F085 |
Description | Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC |
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مشخصات FDS8958A-F085
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDS8958A-F085
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 900mW
- Total Gate Charge (Qg@Vgs) 16nC@10V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 575pF@15V
- Continuous Drain Current (Id) 7A;5A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 28mΩ@7A,10V
- Package SOP-8
- Manufacturer onsemi
- Series Automotive, AEC-Q101, PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N and P-Channel
- FET Feature Logic Level Gate
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 7A, 5A
- Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
- Power - Max 900mW
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package 8-SOIC
- Base Part Number FDS89
- detail Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
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