دیتاشیت FQU11P06TU
مشخصات دیتاشیت
| نام دیتاشیت | FQD11P06, FQU11P06 |
|---|---|
| حجم فایل | 1376.4 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت FQD11P06, FQU11P06 |
FQD11P06, FQU11P06 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQU11P06TU
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 38W
- Total Gate Charge (Qg@Vgs): 13nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 420pF@25V
- Continuous Drain Current (Id): 9.4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 45pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@10V,4.7A
- Package: IPAK-3
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number: FQU1
- detail: P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK
