FQU11P06TU
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| Manufacturer | onsemi |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | FQD11P06, FQU11P06 |
| Description | P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK |
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مشخصات FQU11P06TU
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQU11P06TU
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 38W
- Total Gate Charge (Qg@Vgs) 13nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 420pF@25V
- Continuous Drain Current (Id) 9.4A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 45pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 150mΩ@10V,4.7A
- Package IPAK-3
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 185mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 38W (Tc)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number FQU1
- detail P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK
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