KSD2012GTU دیتاشیت

KSD2012GTU

مشخصات دیتاشیت

نام دیتاشیت KSD2012GTU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت KSD2012GTU

دانلود دیتاشیت

سایر مستندات

KSD2012 6 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi KSD2012GTU
  • Transistor Type: NPN
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 25W
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
  • Power - Max: 25W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
  • Base Part Number: KSD2012
  • detail: Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F

محصولات مشابه