دیتاشیت J112-D26Z
مشخصات دیتاشیت
نام دیتاشیت |
J111-12
|
حجم فایل |
87.421
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/JFETs
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FET Type:
N-Channel
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Datasheet:
onsemi J112-D26Z
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Operating Temperature:
-55°C~+150°C@(Tj)
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Input Capacitance (Ciss@Vds):
-
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Total Device Dissipation (Pd):
625mW
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Drain Current (Idss@Vds,Vgs=0):
5mA@15V
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Gate-Source Breakdown Voltage (V(BR)GSS):
35V
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Gate-Source Cutoff Voltage (VGS(off)@ID):
1V@1uA
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Static Drain-Source On Resistance (RDS(on)):
50Ω
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Breakdown (V(BR)GSS):
35V
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Current - Drain (Idss) @ Vds (Vgs=0):
5mA @ 15V
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Voltage - Cutoff (VGS off) @ Id:
1V @ 1µA
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Input Capacitance (Ciss) (Max) @ Vds:
-
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Resistance - RDS(On):
50 Ohms
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Power - Max:
625mW
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
J112
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detail:
JFET N-Channel 35V 625mW Through Hole TO-92-3