J112-D26Z
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | J111-12 |
| Description | JFET N-Channel 35V 625mW Through Hole TO-92-3 |
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مشخصات J112-D26Z
- RoHS true
- Category Triode/MOS Tube/Transistor/JFETs
- FET Type N-Channel
- Datasheet onsemi J112-D26Z
- Operating Temperature -55°C~+150°C@(Tj)
- Input Capacitance (Ciss@Vds) -
- Total Device Dissipation (Pd) 625mW
- Drain Current (Idss@Vds,Vgs=0) 5mA@15V
- Gate-Source Breakdown Voltage (V(BR)GSS) 35V
- Gate-Source Cutoff Voltage (VGS(off)@ID) 1V@1uA
- Static Drain-Source On Resistance (RDS(on)) 50Ω
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Voltage - Breakdown (V(BR)GSS) 35V
- Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds -
- Resistance - RDS(On) 50 Ohms
- Power - Max 625mW
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number J112
- detail JFET N-Channel 35V 625mW Through Hole TO-92-3
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