دیتاشیت FDC642P

FDC642P

مشخصات دیتاشیت

نام دیتاشیت FDC642P
حجم فایل 302.278 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت FDC642P

FDC642P Datasheet

مشخصات

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDC642P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.6W
  • Total Gate Charge (Qg@Vgs): 16nC@4.5V
  • Input Capacitance (Ciss@Vds): 925pF@10V
  • Continuous Drain Current (Id): 4A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@4A,4.5V
  • Package: SSOT-6
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT™-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Base Part Number: FDC642
  • detail: P-Channel 20V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6